| 摘要 |
PURPOSE: A metal oxide semiconductor(MOS) transistor of a charge coupled device(CCD) sense amplifier is provided to improve a transconductance characteristic and to prevent a short channel effect, by forming a gate oxidation layer and an insulating layer over a source/drain which have different thickness. CONSTITUTION: A metal oxide semiconductor(MOS) transistor of a charge coupled device(CCD) sense amplifier comprises a substrate(1), a high density source/drain(3,2), a gate oxidation layer, a stack of the first oxidation layer(4), a nitride layer(5) and the second oxidation layer(6) and a gate electrode(7). The high-density source/drain is positioned in a predetermined depth from the surface of the substrate, separated from each other. The gate oxidation layer is positioned on the high-density source/drain and the substrate between the high-density source and drain. The stack of the first oxidation layer, nitride layer and second oxidation layer is formed on the gate oxidation layer over the high-density source/drain. The gate electrode is positioned on the gate oxidation layer in the stack structure.
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