| 摘要 |
PROBLEM TO BE SOLVED: To provide an edge light emitting element whose outside light emitting efficiency is improved. SOLUTION: In an edge light emitting thyristor, NPNP structures 12, 14, 16, and 18 are laminated on an N type substrate 10, and an insulating film 19 and an anode electrode 20 are formed on the anode layer 18. It is desired that the anode electrode 20 is connected with the anode layer 18 only in the neighborhood of the edge so that the outside light emitting efficiency of the edge light emitting thyristor can be improved. Then, the insulating layer 19 is set at a position separated from the edge. |
