发明名称 RESIST MASK AND ITS FORMATION
摘要 PROBLEM TO BE SOLVED: To easily obtain a coating film having high uniformity and to manufacture a high precision mask by forming a resist film from plural resist layers and controlling the thickness of each of the resist layers. SOLUTION: A mask substrate 1 comprises quartz glass 2 and a light shielding film 3 laminated on the glass 2. A resist film 4 is formed on the mask substrate 1 by laminating 1st to 3rd resist layers 4a-4c. The resist film 4 is formed from the plural resist layers 4a-4c and the thickness of each of the resist layers 4a-4c is controlled. Since unevenness in the thickness of a resist film by a rotary cup system is caused in the drying of an applied resist and is in proportion to the thickness of a coating film, the unevenness can be reduced by dividedly applying the resist.
申请公布号 JP2000347382(A) 申请公布日期 2000.12.15
申请号 JP19990155513 申请日期 1999.06.02
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 HIRUTA KOJI
分类号 B05D1/32;G03F1/54;G03F7/16;H01L21/027 主分类号 B05D1/32
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