Method of manufacturing dielectric ceramic composition for electronic devices

摘要

A method for producing X(BaZ.Sr1-Z)(Zn1/3.(TaM.Nb1-M)2/3)O3-Y(BaZ'.Sr1-Z')(Ga1/2.Ta1/2)O3 solid solution system, characterized in that sintering is carried out at a temperature of 1400 DEG C to 1550 DEG C in an atmosphere of N2 containing oxygen in a concentration of 6 % to 40 % or sintering is carried out at a temperature of 1400 DEG C to 1550 DEG C after presintering at a temperature of 900 DEG C to 1300 DEG C. This method is suitably used in order to constantly produce a dielectric porcelain composition for an electronic device which has a reduced temperature coefficient of resonance frequency and an excellent specific dielectric constant, and is uniform with respect to the quality distribution in one composition, by suppressing the evaporation of the Zn contained in a conventional porcelain composition of a perovskite type compound and adjusting the oxygen concentration in an atmosphere for sintering to a specific value without controlling a composition.