| 摘要 |
A vertical type MISFET having a trench structure is improved in pressure resistance without increasing its on-resistance. In the vertical type MISFET, a p-type base region is so formed as to be deeper than a trench immediately under which is formed an n-type semiconductor region. This region is adjacent to an n-type epitaxial layer and higher in concentration of impurities than an n-type semiconductor substrate.
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