发明名称 Rework method utilizing thinner for wafers in manufacturing of semiconductor devices
摘要 A thinner composition for removing photoresist, a rework method for wafers, and a method of manufacturing semiconductor devices are provided. The thinner composition is applied for removing excess photoresist coated on the edge side or back side of wafer. The thinner may be a mixture of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP), and tau -butyro lactone (GBL), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP), or a mixture of ethyl lactate (EL), and ethyl-3-ethoxy propionate (EEP). The rework process is carried out, using the above thinner compositions, on the wafers having excess coated photoresist due to an etching failure. The method of manufacturing semiconductor devices includes a rinsing step for removing the excess coated photoresist on the edge side or back side of wafer by using the above thinner compositions.
申请公布号 US6159646(A) 申请公布日期 2000.12.12
申请号 US19980148160 申请日期 1998.09.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON, MI-SOOK;LEE, CHUN-DEUK;LEE, BO-YONG
分类号 C11D7/26;C11D7/50;G03F7/16;G03F7/30;G03F7/42;H01L21/027;(IPC1-7):G03F9/00 主分类号 C11D7/26
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