发明名称 Method and apparatus for testing SRAM memory cells
摘要 A write driver circuit includes a drive circuit having a first drive node adapted to receive a first voltage, a second drive node, an input adapted to receive a data signal, and an output. The drive circuit couples the output to the first voltage node when the data signal has a first logic voltage, and couples the output to the second drive node when the data signal has a second logic voltage. A test circuit has an input adapted to receive a test mode signal, and an output coupled to the second drive node. The test circuit develops a first impedance between the second drive node and a second voltage source when the test mode signal is active, and develops a second impedance between the second drive node and the second voltage source when the, test mode signal is inactive.
申请公布号 US6161204(A) 申请公布日期 2000.12.12
申请号 US19980024826 申请日期 1998.02.17
申请人 MICRON TECHNOLOGY, INC. 发明人 GANS, DEAN
分类号 G11C29/50;(IPC1-7):G11C29/00 主分类号 G11C29/50
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