Method of fabricating landing pad

摘要

A method of fabricating a landing pad. A gate electrode is formed on a substrate. The gate electrode has a top surface covered by a cap layer and a sidewall covered by a spacer. A polysilicon layer is formed to cover the gate. Using an oxygen based etchant to performed an isotropic chemical dry etching on the polysilicon layer, the polysilicon layer is planarized until a part of the spacer is exposed. The polysilicon layer is patterned to form a landing pad in contact with the substrate.