Method of manufacturing semiconductor device

摘要

In a method of manufacturing a semiconductor device which has a semiconductor substrate, a channel layer formed on the semiconductor substrate and an insulating film deposited on the channel layer, an opening corresponding to a gate electrode pattern is formed in the insulating film by the use of a photoresist film. The channel layer contains crystal components while the photo-resist film contains carbon. The insulating film is etched to exposed said channel layer after removing the photoresist film. In consequence, no reacted production is formed between the crystal components and the carbon on the exposed channel layer.