| 摘要 |
In this manufacturing method of a semiconductor device, after an electrode pad is formed on a surface of a semiconductor substrate, on this surface where the electrode pad is formed, except for on the electrode pad an insulating protective film is formed, then a layer of barrier metal covering the electrode pad is formed. Subsequently, a covering layer of curable resin having a hole exposing at least a part of the layer of barrier metal is formed on a semiconductor substrate. Then, the hole of the covering layer of curable resin is filled by conductive material and on the filled portion a protrusion is formed. Finally, these filled and protruded portions are exposed to heat treatment to form a protruded electrode for external connection. Thus, a semiconductor device having a protruded electrode that is high sufficiently, can be manufactured. Thermal stress does not concentrate at joint portion with the semiconductor substrate, and semiconductor device is highly reliable. In addition, the semiconductor device is reduced in bending or prevented from bending, resulting in easy mounting.
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