| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma film forming device by which the damage to an object to be worked such as a wafer caused by high energy ions is reduced, and furthermore, more uniform film formation at a high speed is made possible. SOLUTION: This device is provided with a rotary magnetic field coil 1 forming the magnetic field in a direction parallel to the surface of a wafer 8 in a plasma reaction chamber 4 so as to uniformize the distribution of plasma generated in a plasma generating chamber 3 and rotating this magnetic field in the direction of the azimuth angle, a porous electrode 33 imparing directivity in a direction vertical to the surface of the wafer 8 to ions and radicals generated in the plasma generating chamber 3 and decelerating the ions and depositing them on the surface of the wafer 8.
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