| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma film formation treating method enabling the formation of a film of high density and high quality on the body to be film- forming having a large surface area where plasma is generated in a vessel, and the surface of the body to be film-formed arranged in the vessel is subjected to film formation treatment. SOLUTION: A substrate with a diameter 12 inches to be film-formed is arranged on a pedestal 7, process gas contg. SiH4, N2 and Ar is fed from a gas feed port 17 into a vessel, and the magnetic field parallel to the surface of the substrate is formed by an electromagnet 8. A high-frequency power of 13.56 MHz, 1500 W is applied to an antenna 11 and electromagnetic waves are made incident on the inside of the vessel 1 to generate plasma in the vessel 1. A bias power of >=0.28 W/cm2 is applied to the substrate from a low-frequency power source 19 and the film is formed at a forming rate of >=2000Å/min.
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