发明名称 |
Method of producing semiconductor device |
摘要 |
A method of producing a semiconductor device by which the resistivities of the base, collector, and source/drain regions in a Bi-CMOS are decreased and the production step is simplified. A method of producing a semiconductor device comprising the steps of forming a gate electrode (the first semiconductor layer) on a substrate; forming an insulating film; forming a second semiconductor layer; leaving the second semiconductor layer and the insulating film on the bipolar part and removing them on the CMOS part to form sidewalls on the side faces of the gate electrode; forming source/drain regions; forming a Ti layer over the entire surface and forming silicide on the surfaces of the second semiconductor layer, the source/drain regions, and the gate electrode; and forming a base electrode by patterning the second semiconductor layer.
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申请公布号 |
US6159784(A) |
申请公布日期 |
2000.12.12 |
申请号 |
US19990332038 |
申请日期 |
1999.06.14 |
申请人 |
SONY CORPORATION |
发明人 |
AMMO, HIROAKI;MIWA, HIROYUKI |
分类号 |
H01L21/8249;H01L27/06;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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