Method for using ultrasound for assisting forming conductive layers on semiconductor devices

摘要

The present invention provides three embodiments to deposit layers over a substrate using ultrasound energy to vibrate the substrate during (1) PVD or CVD deposition, (2) anneal or (3) plating deposition. The first embodiment deposits a first layer over a substrate using ultrasonic energy to vibrate the substrate. The ultrasound allows the layer to deposit more conformal over opening sidewalls and decreases overhangs and voids. The second embodiment involves using ultrasonic vibrations during annealing or RTA. The ultrasound smooches out barrier/seed/conductive layers in contact holes. The third embodiment is a method of plating a metal layer such as Cu over a substrate while vibrating the substrate with ultrasonic waves. The substrate is vibrated with ultrasound waves in vertical or horizontal direction. The ultrasonic vibration allow the metal to plate in small contact holes with improved step coverage.