Methods of forming nitride dielectric layers having reduced exposure to oxygen

摘要

of A method of forming a dielectric layer includes the steps of forming an electrode on a microelectronic substrate, and forming depressions and protrusions on exposed portions of the electrode thereby increasing a surface area thereof. An exposed portion of the electrode including the depressions and protrusions is nitrified, and the electrode is not exposed to oxygen during and between the steps of forming the depressions and protrusions and nitrifying the exposed portion of the electrode. A nitride layer is then formed on a nitrified electrode. Related structures are also discussed.