发明名称 |
Sub-quarter micron silicon-on-insulator MOS field effect transistor with deep silicide contact layers |
摘要 |
A semiconductor thin film structure includes source/drain regions and a channel region positioned between the source/drain regions. The semiconductor thin film structure extends directly on and in contact with a surface of an insulation region. At least one of the source/drain regions includes a semiconductor material region extending directly over and in contact with the surface of the insulation region and a refractory metal silicide layer extending directly on and in contact with the semiconductor material region. The refractory metal silicide layer has a first thickness which is equal to or thicker than a half of a second thickness of the channel region, thereby suppressing any substantive kink effect. The first thickness of the refractory metal silicide layer is also thinner than a third thickness of the source/drain regions, so that at least a majority part of a bottom surface of the refractory metal silicide layer has a junction interface with the semiconductor material region of the source/drain regions, thereby reducing a parasitic resistance of the source and drain regions.
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申请公布号 |
US6160293(A) |
申请公布日期 |
2000.12.12 |
申请号 |
US19980176914 |
申请日期 |
1998.10.22 |
申请人 |
NEC CORPORATION |
发明人 |
ONISHI, HIDEAKI;IMAI, KIYOTAKA |
分类号 |
H01L29/45;H01L29/786;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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