发明名称 |
Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate |
摘要 |
A method of producing a batch of MQW lasers from a plurality of wafers having doping concentrations within a concentration range. The MQW lasers are produced by epitaxially growing an InGaAsP quaternary layer on the substrates in a metal-organic chemical vapor deposition (MOCVD) reactor. The method includes the steps of segregating the substrates into groups based upon the substrate doping concentrations and batch producing the lasers at specific target wavelengths for each segregated substrate group.
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申请公布号 |
US6159758(A) |
申请公布日期 |
2000.12.12 |
申请号 |
US19990350712 |
申请日期 |
1999.07.09 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
EBERT, CHRIS W.;GRAY, MARY L.;GRIM-BOGDAN, KAREN A.;SEILER, JOSEPH BRIAN;TZAFARAS, NIKOLAOS |
分类号 |
H01S5/02;H01S5/343;(IPC1-7):H01L21/20 |
主分类号 |
H01S5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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