发明名称 PRODUCTION OF HIGHLY HEAT-CONDUCTIVE SILICON NITRIDE SINTERED COMPACT AND THE SINTERED COMPACT
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a highly heat-conductive silicon nitride sintered compact having high thermal conductivity and strength, with which the silicon nitride is obtained without sintering at high temp. and high pressure in a nitrogen atmosphere. SOLUTION: The silicon nitride is produced by adding, as sintering aids, magnesium(Mg) and elements (RE) of group 3a of the Periodic Table in a total amount of 0.5 to 5.0 vol.% expressed in terms of magnesium oxide (MgO) and each oxide (RExOy) to a silicon nitride powder containing 0 to 2.0 wt.% oxygen, then forming and sintering the formed body in a nitrogen atmosphere or an inert atmosphere at 1,750 to 1,950 deg.C.
申请公布号 JP2000344577(A) 申请公布日期 2000.12.12
申请号 JP19990159034 申请日期 1999.06.07
申请人 HITACHI METALS LTD 发明人 IMAMURA TOSHIYUKI;SOFUE MASAHISA;FUKUZAWA HIROSHI
分类号 C04B35/626;C01B21/068;C04B35/584 主分类号 C04B35/626
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