| 摘要 |
A first substrate of the three layer structure composed of a lower layer portion consisting of silicon, a middle layer portion consisting of SiO2 and an upper layer portion consisting of silicon is prepared. Impurity is doped into the lower layer portion so that it has conductivity. The lower surface of the lower layer portion is etched to form a diaphragm portion and a pedestal portion, and then a second substrate consisting of glass is joined to the portion therebelow. By the electrodes on the second substrate and the diaphragm portion, capacitance elements are formed. Grooves are dug by a dicing blade from the upper surface of the upper layer portion thereafter to downwardly dig the bottom portions of the grooves by etching until the upper surface of the lower layer portion is exposed. When the respective unit areas are cut off, there is obtained a structure in which a weight body is positioned at the central portion of the diaphragm portion and a pedestal is formed at the periphery thereof. Piezo resistance elements may be used in place of the capacitance elements.
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