发明名称 |
Method of fabricating lateral power MOSFET having metal strap layer to reduce distributed resistance |
摘要 |
To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passivation layer over the bus and plating a thick metal layer, preferably nickel, in the channel. The metal strap layer dramatically reduces the resistance of the bus.
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申请公布号 |
US6159841(A) |
申请公布日期 |
2000.12.12 |
申请号 |
US19990264602 |
申请日期 |
1999.03.08 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
WILLIAMS, RICHARD K.;KASEM, MOHAMMAD |
分类号 |
H01L21/3205;H01L21/8234;H01L23/482;H01L23/52;H01L27/088;H01L29/10;H01L29/417;H01L29/78;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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