发明名称 |
Process to prepare an array of wires with submicron diameters |
摘要 |
A method is disclosed for forming an array of submicron-sized wires in a host body. In the method, the vapor of a metal, such as bismuth, is caused to flow upward through a horizontal refractory plate having many through holes, 200 nanometers or less in diameter, until all foreign material is excluded from the holes and then the plate is cooled from the top side to progressively and simultaneously condense said vapor to form said wires in the holes.
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申请公布号 |
US6159831(A) |
申请公布日期 |
2000.12.12 |
申请号 |
US19980166246 |
申请日期 |
1998.10.05 |
申请人 |
GENERAL MOTORS CORPORATION;DELPHI TECHNOLOGIES INC. |
发明人 |
THRUSH, CHRISTOPHER MARK;HEREMANS, JOSEPH PIERRE |
分类号 |
C30B25/00;H01L29/26;(IPC1-7):H01L21/28;C30B29/00;C30B29/62;H01B7/18;H01B9/02 |
主分类号 |
C30B25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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