发明名称 Process and compositions for nitration of n-nitric acid at elevated temperatures to form HNIW and recovery of gamma HNIW with high yields and purities and crystallizations to recover epsilon HNIW crystals
摘要 Processes and compositions for nitration of N-substituted isowurtzitane compounds with concentrated nitric acid at elevated temperatures to form HNIW and recovery thereof with high yields and purities. Polymorphic conversions to the epsilon HNIW crystal form at quanititative yields are also described.
申请公布号 US6160113(A) 申请公布日期 2000.12.12
申请号 US19990300988 申请日期 1999.04.28
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 发明人 DUDDU, RAJA;DAVE, PARITOSH R.
分类号 C06B25/34;C07D487/02;(IPC1-7):C07D255/04 主分类号 C06B25/34
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