发明名称 |
Non-volatile semiconductor memory device and erasing method for said device |
摘要 |
An electrically erasable and writable non-volatile semiconductor memory device having a function of collectively erasing a plurality of memory blocks selected as erase object memory blocks is provided. A logic circuit and an output buffer circuit constitute an erase object memory block selection notifying circuit, which outputs an erase object memory block selection notifying signal indicating whether designated memory blocks have been selected as erase object memory blocks or not, in synchronization with an output enable signal supplied from the CPU. Thus, the erasing operation mode period in the non-volatile semiconductor memory device can be shortened.
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申请公布号 |
US6160741(A) |
申请公布日期 |
2000.12.12 |
申请号 |
US19990459579 |
申请日期 |
1999.12.13 |
申请人 |
FUJITSU LIMITED |
发明人 |
UEYAMA, TAKAYUKI;ODA, TAKANOBU |
分类号 |
G11C16/02;G11C16/16;(IPC1-7):G11C16/10 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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