Method for fabricating borderless and self-aligned polysilicon and metal contact landing plugs for multilevel interconnections

摘要

A method for making a novel structure having borderless and self-aligned polysilicon and metal contact landing plugs for multilevel interconnections on integrated circuits is achieved. An etch-stop layer and a planar insulating layer are formed over the devices on a substrate. Contact openings are etched in the insulating layer to the etch-stop layer and the etch-stop layer is removed over the N- contact areas. An N+ doped polysilicon layer is deposited, and second contact openings are etched in the polysilicon and insulating layers over N+ and P+ contacts on the substrate to the etch-stop layer. The etch-stop layer is selectively removed and a conducting barrier layer and a metal layer are deposited having a second etch-stop layer on the surface. The layers are patterned to form interconnecting lines and concurrently to form polysilicon landing plugs to the N- contacts, while forming metal landing plugs to the N+ and P+ contacts. Via holes can now be etched in a second insulating layer over and to the landing plugs. The polysilicon landing plugs to the N- contacts reduce current leakage, while the metal contacts to the N+ and P+ contacts reduce the contact resistance (Rc). The landing plugs protect the substrate contacts from damage during via hole etch and reduce the aspect ratio for making more reliable contacts.