| 摘要 |
To provide a developing solution and a developing method, by which an ultrafine pattern of a photoresist can be formed in a high yield and the components of the developing solution remaining on a wafer can be thouroughly removed by washing with ultrapure water after the development. The developing solution is one to be used in preparing a photoresist and comprises a surfactant and an aqueous alkali solution, which is characterized in that it contains H2O2, that the aqueous alkali solution is an aqueous solution of tetramethylammonium hydroxide (TMAH) or one mainly comprising TMAH, and that the molecular weight of the surfactant is 500 to 5,000. The developing method is characterized by using a developing solution for preparing a photoresist comprising a surfactant and an aqueous alkali solution and containing H2O2 to pattern a photoresist on a substrate. <IMAGE> |
