发明名称 POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY
摘要 PROBLEM TO BE SOLVED: To ensure superior sensitivity, resolving power, dry etching resistance and adhesion to a substrate and to prevent the occurrence of development defects and scum in development by incorporating a specified acid decomposable resin and a specified additive. SOLUTION: This positive photoresist composition contains a compound which generates an acid when irradiated, an acid decomposable resin having repeating units of at least one of formulae I and II and repeating units of formula III and a fluorine-containing surfactant and/or a silicon-containing surfactant. In the formula I, R1 and R2 are each H, cyano, hydroxy or the like, X is O, S or the like and A is a single bond or a divalent combining group. In the formula II, Z2 is -O- or -N(R3)- and R3 is H, hydroxy or the like. In the formula III, R11 and R12 are each H, cyano, halogen or the like and Z is an atomic group containing bonded two carbon atoms (C-C) for forming an alicyclic structure.
申请公布号 JP2000338672(A) 申请公布日期 2000.12.08
申请号 JP19990145223 申请日期 1999.05.25
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;ADEGAWA YUTAKA;AOSO TOSHIAKI
分类号 H01L21/027;G03F7/004;G03F7/039 主分类号 H01L21/027
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