发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent generation of breakdown voltage faults, even when an epitaxial film is embedded within a groove. SOLUTION: An epitaxial film 107 is embedded in a groove made in the surface of a semiconductor main body and then subjected to oxidation treatment to remove oxide films on the surface of the epitaxial film and on the surface of the semiconductor main body. The surface of the embedded epitaxial film may be removed together with the surface of the semiconductor main body by a chemical and mechanical polishing method. A part of the embedded epitaxial film may be removed to form a trench gate in the film corresponding to the removed part.
申请公布号 JP2000340578(A) 申请公布日期 2000.12.08
申请号 JP19990150341 申请日期 1999.05.28
申请人 HITACHI LTD 发明人 MIYAUCHI AKIHIRO;INOUE HIRONORI;SAKAMOTO MITSUZO;MORI MUTSUHIRO
分类号 H01L21/336;H01L29/06;H01L29/78 主分类号 H01L21/336
代理机构 代理人
主权项
地址