SIDEWALL REMOVING LIQUID

摘要

PROBLEM TO BE SOLVED: To provide a sidewall removing liquid which is capable of rapidly (within 60 minutes) removing the sidewalls generated at the time of dry etching in a semiconductor production stage at a low temperature (<=150 deg.C) and is not capable of eroding a wiring material at this time. SOLUTION: The sidewall removing liquid is an aqueous solution of nitric acid and sulfuric acid and/or phosphoric acid and the nitric acid concentration thereof is 0.01 to 50 wt.% and the sulfuric acid and/or phosphoric acid concentration is 0.001 to 30 wt.%. The method for formation of resist patterns includes a stage of washing the sidewalls generated at the time of the dry etching in the semiconductor production stage by any one of the sidewall removing liquids described above.