发明名称 CAPACITANCE-DETECTION-TYPE RADIATION DETECTION SENSOR AND IMAGING DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To improve a detection sensitivity by making an arrangement so that an upper electrode moves consequent upon the change in curvature caused by the temperature change of sensing part that is formed of a double-layer film with different expansion coefficients, whose one end is fixed, in opposition to the lower electrode with a specific interval. SOLUTION: Lower electrodes 7 and 11, an insulation film 9 for protecting them, and a post 5 are provided on a substrate 10. One end of an insulator 4 made of SiO is fixed to the post 5. An upper electrode 2 made of Al is arranged in opposition to the lower electrodes 7 and 11, and a double-layer film is formed of the insulator 4 and a bimetal structural part AO. Since Al and SiO have different coefficients of expansion, the double-layer film has a different curvature depending on temperature. The post 5 and BO part of the insulator 4 support the upper electrode 2 and the lower electrode 7 so that they are maintained at a specific interval. Infrared rays that have been applied are absorbed by a radiation absorption part 1 on the upper electrode 2 for converting to heat. The heat warps the bimetal structure part AO, changes the synthetic capacitance between the upper electrode 2 and the lower electrodes 7 and 11, and a detected voltage is changed.
申请公布号 JP2000337968(A) 申请公布日期 2000.12.08
申请号 JP19990148914 申请日期 1999.05.27
申请人 NIKON CORP 发明人 SHODA MASAHIRO
分类号 H04N5/33;G01J1/42;G01J5/40;H01L27/14;H01L31/00;(IPC1-7):G01J5/40 主分类号 H04N5/33
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