发明名称 LIGHT EMITTING DIODE
摘要 PROBLEM TO BE SOLVED: To relatively easily constitute a large-area display and set it to the thin-type, long-life, and full-color display at low cost by setting an inorganic hole implantation transport layer to an inorganic insulating hole implantation transport layer with silicon and/or germanium oxide set to major components. SOLUTION: Preferably, when the mean composition of major components is expressed by (Si1-xGex)Oy, then O<=x<=1 and 1.7<=y<=1.99, an inorganic insulating electron implantation transport layer includes silicon oxide (SiO2) and/or germanium oxide (GeO2) as stabilizer, and this light emitting diode includes the constituents, or the major components 80-99 mol% and the stabilizer 1-20 mol% relative to the whole components. This light emitting diode is so constituted that a substrate 1, a positive electrode 2, an inorganic hole implantation layer 3, a light emitting layer 4, a high-resistance inorganic insulating electron implantation transport layer 5, and a negative electrode (electron implantation electrode) 6 are sequentially laminated.
申请公布号 JP2000340366(A) 申请公布日期 2000.12.08
申请号 JP19990148796 申请日期 1999.05.27
申请人 TDK CORP 发明人 ARAI MICHIO
分类号 H01L51/50;H05B33/12;H05B33/14;H05B33/22;(IPC1-7):H05B33/22 主分类号 H01L51/50
代理机构 代理人
主权项
地址