| 摘要 |
PROBLEM TO BE SOLVED: To realize a manufacturing method of a light emitting device which can extract light emitting by the active layer of the device, which is made of 4-element compound semiconductor InGaAlP without being absorbed by a GaAs substrate, and a manufacturing method of the device with a high yield. SOLUTION: After a window layer is grown by an organic metal vapor phase growth method, the thickness increase of the window layer, which is difficult with the organic metal vapor phase growth, is conducted by a liquid phase epitaxial growth method to achieve a thickness of not less than 100 μm. With this constitution, even if the GaAs substrate is removed, strength sufficiently high to endure wafer handling, so that a light emitting device with a construction free from the light absorption of the GaAs substrate 2 can be manufactured with a high yield. |
