| 摘要 |
PROBLEM TO BE SOLVED: To form a mask by which highly accurate patterning can be performed. SOLUTION: In this method for forming a mask, a polymer layer 12 having a flat surface is formed on a semiconductor substrate 11 subjected to a specified processing so as to cover a step 11a thereof. Then, a reflection prevention film 13 for preventing the reflection of light is formed thereon. A photo resist is patterned to make a mask for applying the specified processing to the semiconductor substrate 11. Further, while using the patterned photo resist 14 as a mask, the reflection prevention film 13 and polymer layer 12 are etched under such a condition that the etching speed of the polymer layer 12 is higher than that of the reflection prevention film 13 and more higher than that of the semiconductor substrate 11, so that a mask for processing the semiconductor substrate 11 is formed. |
