| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively provide a high-resolution scanning electron microscope, which can project a large-current electron beam with a low accelerating voltage and can be used for a method by which an isolated area caused by imperfect contacts that occurs in a semiconductor element and cannot be detected through visual inspections which are carried out by obtaining surface images is discovered from a potential contacted image. SOLUTION: In a method for detecting isolated pattern, a large-current electron beam projecting barrel, which is used for injecting charges into a sample at a shallow angle from the surface of the sample and an observatory electron beam projecting barrel for obtaining second electron images, are provided separately. An isolated pattern, which is not discriminated from the appearance of the sample, is detected by executing work for detecting secondary electron information by projecting a large- current electron beam 12 upon the surface of the sample for a fixed period of time and then projecting an electron beam 2 for observation upon the portion irradiated with the beam 12 and obtaining the microscopic image B of a potential difference contrast by performing scanning, in such a way that the portions which are irradiated with the beam 12 and 2 and from which the information is detected are shifted successively.
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