发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce loss of a circuit for driving the base of a bipolar transistor and a switching loss upon turning off thereof. SOLUTION: A unipolar transistor is connected between a base 3 and an emitter 4 of a bipolar transistor. When the bipolar transistors are of Darlington connection type, a unipolar transistor is connected between the base of each of the bipolar transistors and an emitter of the final stage of bipolar transistor. A base current is externally supplied to the semiconductor device in the on mode, the supply of the base current is stopped in an off mode to apply a voltage to a gate terminal G to turn on the unipolar transistor and to discharge excessive carriers in the base region 3 of the bipolar transistor.
申请公布号 JP2000340577(A) 申请公布日期 2000.12.08
申请号 JP19990177571 申请日期 1999.06.24
申请人 FUJI ELECTRIC CO LTD 发明人 HARADA YUICHI;IWAANA TADAYOSHI
分类号 H01L29/73;H01L21/331;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/04;H01L27/06;H01L27/082;H01L29/78;(IPC1-7):H01L21/331;H01L21/822;H01L21/824 主分类号 H01L29/73
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