| 摘要 |
PROBLEM TO BE SOLVED: To obtain a conductive action only in one direction, a small voltage drop in a forward direction upon conduction, small voltage and power losses. SOLUTION: A transistor 1 has a 4-layer structure consisting of a collector layer 11, a first base layer 12, an emitter layer 13 and a second base layer 14. The collector layer 11 is an N-type semiconductor region, and the first base layer 12 is a P-type semiconductor region. The emitter layer 13 is an N-type semiconductor region, and a second base layer 14 is a P-type semiconductor region. In the transistor 1, the second base layer 14 is formed outside of the emitter layer 13 in the 3-layer structure of an NPN transistor, a first resistor R1 is connected between a first base terminal Bt1 of the first base layer 12 and an emitter terminal Et of the emitter layer 13, to supply a bias current from a power source E via a second resistor R2 between the second base layer 14 and the emitter layer 13.
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