| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where upper metallic wiring and lower metallic wiring are in contact within a contact hole for connecting the upper wiring with the lower wiring. SOLUTION: A semiconductor device has a power-layer wiring 2, consisting of lower-layer bottom barrier metallic wiring 2a, lower-layer metallic, wiring 2b, and a lower-layer top barrier metallic wiring 2c, an insulating layer 3, and upper-layer wiring 4 consisting of an upper-layer bottom barrier metal wiring 4a, an upper-layer metallic wiring 4b, and an upper-layer top barrier metallic wiring 4c. The lower-layer wiring 2 and the upper-layer wiring 4 are connected with each other through a contact hole 6. In this case, the lower-layer metallic wiring 2b and the upper-layer metallic wiring 4b are connected directly through the contact hole 6, at the interface whereon the upper-layer wiring 4 and the lower-layer wiring 2 are connected with each other.
|
