发明名称 FINE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To draw a fine pattern even when a resist is thick by executing the fine process with the scanning probe lithography to utilize a gap between radiated patterns. SOLUTION: A probe is scanned with the scanning probe lithography for a negative resist film 2 coating a substrate 1. A voltage is applied across this probe and substrate 1 to radiate the electrons into a resist film 2 from the probe. Resist molecules are made to react to form a latent image within the resist film 2 just under the probe to draw a pattern on the resist film 2. The pattern is then developed to form the desired shape with the resist film 2 at the surface of substrate 1. A fine structure is manufactured by utilizing a gap between the produced patterns. Thereby, a fine pattern can easily be manufactured on a thick resist.
申请公布号 JP2000340485(A) 申请公布日期 2000.12.08
申请号 JP19990149330 申请日期 1999.05.28
申请人 HITACHI LTD 发明人 ISHIBASHI MASAYOSHI;HASHIZUME TOMIHIRO;HEIKE SEIJI
分类号 B81C1/00;B82B3/00;G03F7/20;G11B5/62;G11B5/64;G11B5/65;G11B5/73;G11B5/858;H01L21/027;H05K1/00;(IPC1-7):H01L21/027 主分类号 B81C1/00
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