| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device such as a microprocessor satisfactory in high speed operation, low power consumption and reliability by preventing the occurrence of malfunction in a CMOS circuit including a MOS transistor(TR) having low threshold voltage and realizing stable operation in a circuit for controlling the substrate potential of the CMOS circuit to reduce a sub-threshold current. SOLUTION: This semiconductor integrated circuit device is provided with a main circuit LOG including a MOS TR constituted on a semiconductor substrate, a substrate potential control circuit VBC for controlling voltage impressed to the substrate and a substrate potential conversion circuit SWCELL for controlling voltage impressed to the substrate of the main circuit LOG. Then, control signalsΦp,Φn outputted from the circuit VBC are inputted to the gate of a MOS TR constituting the circuit SWCELL and substrate potential outputs Vbp, Vbn outputted from the circuit VBC are inputted to the substrate of the MOS TR constituting the main circuit LOG through the circuit SWCELL.
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