| 摘要 |
PROBLEM TO BE SOLVED: To avoid the occurrence of leakage currents in a semiconductor device, which has a FET on an SOI substrate, regardless of the presence or absence of voltage application to a support substrate. SOLUTION: An N-type or P-type lightly-doped region 3, which is insulated and isolated by the surface silicon layer of an SOI substrate 1 in each element region, is formed. A gate electrode 21 is provided on the lightly-doped region 3 via a gate oxide film 15. On both sides of the gate electrode 21, a drain region 5 and a source region 7 are provided. Some of their surfaces, which make contact with the lightly-doped region 3, have a type of conductivity which is different from that of the lightly-doped region 3. A leakage stopper layer 13, which has the same type of conductivity as that of the lightly-doped region 3 and has an impurity concentration higher than that of the lightly-doped region 3, is provided to between the source region 7 and an embedded oxide film 19.
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