| 摘要 |
PROBLEM TO BE SOLVED: To prevent the electrical short circuit between adjacent bit lines. SOLUTION: A silicon nitride 32 which is a second dielectric is exposed by etching a third dielectric BPSG 34, and a via is made in the exposed section of the second dielectric, and the lower-layer section of a gate oxide film 12 which is the first dielectric is exposed, and then a spacer 50 is made on the sidewall of the via. Then, a spacer consists of the material etched at an etching speed exceptionally slower than the etching speed of the first dielectric, and a contact hole is made by removing the exposed section of the first dielectric 12 by bringing etchant into contact with the spacer 50 and the exposed section of the first dielectric 12. |
