| 摘要 |
PROBLEM TO BE SOLVED: To enable plasma cleaning of a wiring section surface prior to process of mounting a semiconductor chip, while ensuring bonding property in wire bonding between the semiconductor chip mounted on the substrate and the wiring section of the substrate. SOLUTION: A metallized substrate 10, having tungsten wiring formed on one surface 11 thereof, is prepared and Cu plating 20 or a Cu thick film 21 is coated. The surface of wiring sections 20, 21 are cleaned by making ion particles generated by plasma arc to collide with the surface 11 of the substrate 10. Subsequently, a semiconductor chip is mounted on the surface 11 of the substrate 10 in a nonoxidizing atmosphere. Then, the semiconductor chip and the wiring section 20, 21 are electrically connected by wire bonding. |
