发明名称 ION BEAM PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ion beam processing device suppressing neutralizing performances to be deteriorated due to the adhesion of insulative polymerized substances to the surface of a strip electrode 8/or to insulating the strip electrode surface by oxidation and stably operating for a long time. SOLUTION: In this device, a means for heating a strip electrode 8 is provided. A material of the surface of the strip electrode 8 is not to react with the gas to be used, or the vapor pressure value of a reaction product at the strip electrode surface temperature is higher than the pressure of a processing chamber end if reacted, or the reaction product has conductivity. The device and suppress neutralizing performances from being deteriorated due to the adhesion of insulative polymerized substances to the strip electrode surface or insulating the strip electrode surface by oxidation so that it can stably operate for a long time.
申请公布号 JP2000340163(A) 申请公布日期 2000.12.08
申请号 JP19990147640 申请日期 1999.05.27
申请人 HITACHI LTD 发明人 ICHIMURA SATOSHI;TSUCHIYA KAZUTOSHI;SATO TADASHI;OGURA SATOSHI;FUJISAWA TATSUYA
分类号 H01J27/02;H01J37/08;H01J37/305;(IPC1-7):H01J37/305 主分类号 H01J27/02
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