| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the effective aperture ratio by forming an offset region between channel and LDD regions, such that the LDD region of a drive TFT overlaps with a gate interconnection through a gate insulating film, and such that the LDD region of a pixel TFT does not overlap with the gate interconnection sandwiching the gate insulating film. SOLUTION: A drive circuit is provided with a p channel TFT(thin-film transistor) 301, and an n channel TFT 302 and 303, while a pixel section is provided with a pixel TFT 304 formed of an n channel TFT. The TFT 302 is provided with an LDD region 207, which is located between a channel forming region 204 and a drain region 206, and which overlaps with a gate interconnection sandwiching a gate insulating film. Furthermore, the TFT 304 is provided with regions 217 to 220 and an offset region 221, which do not overlap with the gate interconnection through via channel-forming regions 213 and 214, a source region 215, a drain region 216, and the gate insulating film.</p> |
