| 摘要 |
PROBLEM TO BE SOLVED: To prevent a plating layer from varying in thickness, in such a manner where the plating layer becomes thick or thin as it approaches or retreats from a specific cathode pin which has small contact resistance to allow a large current to flow when a semiconductor wafer is plated, by bringing cathode pins into contact with a base metal layer which serves as a conductive path. SOLUTION: A semiconductor wafer 1, which is to be plated is equipped with a base metal layer on its plated surface to serve as a conductive path, and cathode pins 6 which are arranged nearly at regular intervals in the circumferential direction on the peripheral edge of the wafer 1 coming into electrical contact with the base metal layer. At the same time, a current control device 17 is provided which separately controls or sets currents that flow each through the cathode pins 6.
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