| 摘要 |
PROBLEM TO BE SOLVED: To enable deposit films filled in recesses to be polished so as to be nearly flush with each other, independently of their aspect ratios when the deposit films are polished through a CMP(chemical-mechanical polishing) method. SOLUTION: Recesses 16 of different aspect ratios are formed on the surface of a base 11, each of the recesses 16 having an aspect ratio larger than a prescribed value is etched additionally deeper, then a deposit film (silicon oxide film) 19 is formed to embed the recesses 16 through a simultaneous competing reaction, and then the deposit films 19 are removed excluding the parts of the films 19 filling the recesses 16. Before the embedded film 19 is formed, the base 11 is doped with impurities by the use of a resist film 17 as an etching mask used in additional etching. |
