| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be analyzed for failures by applying the laser potential probing method, even when the area of a diffusion layer is narrowed to 0.5μm or smaller or a metal silicide layer covering the diffusion layer hinders potential monitoring. SOLUTION: In a semiconductor device, a plurality of transistors, each having a gate electrode, source regions 4 and 6, and drain regions 5 and 7 are formed via insulating and separating regions and metallic wiring is formed in the upper layers of the transistors. At measuring of the potentials at prescribed regions of the transistors by measuring the intensity of the reflected light of laser light projected upon the regions from the rear surfaces of the substrates of the transistors, rectangular potential monitoring regions 11 and 12 which can receive the laser light and have, for example, 0.5μm by 0.5μm regions or larger are partly formed in the source or drain regions and electrically connected to the source areas, drain regions, or gate electrode which become the objects of potential measurement and the potentials at the regions are measured from the intensity of the reflected light of the laser light projected upon the potential monitoring regions.
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