| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable and satisfactory high frequency response characteristic and a switching operation characteristic. SOLUTION: A transistor 1 has four layer structure, where a collector layer 11, a first base layer 12, an emitter layer 13 and a second base layer 14 are stacked. The collector layer 11 is an N-type semiconductor region and the first base layer 12 is a P-type semiconductor region. The emitter layer 13 is N-type semiconductor region, and the second base layer 14 is a P-type semiconductor region. In the transistor 1, the second base layer 14 is formed on the outer side of the emitter layer 13 in a three-layer structure of the conventional NPN-type transistor and a bias current flows in the section between the emitter layer 13 by using the second base layer 14. Only a signal is inputted to the first base layer 12, without giving bias. |
