| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride film which is capable of restraining a semiconductor device from varying in characteristics. SOLUTION: In a semiconductor device, where a silicon nitride film is used as an insulating film 4, a silicon nitride film which has Si-N bonds as a main structure and Si-NH2 bonds as an auxiliary is used as the silicon nitride film. In the silicon nitride film, an Si-N bond peak intensity is set 1,000 times or larger in integrated intensity as an Si-NH2 bond peak intensity based on FTIR absorption spectrum. The nitride film is formed through a plasma CVD method which is preferably carried out at a temperature of 480 deg.C or higher, using a reaction gas that is free of amino groups or lessened in amino group content so as to lessen free hydrogen in the film.
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