| 摘要 |
PROBLEM TO BE SOLVED: To provide a very accurate silicon isotropic etching method which is capable of easily controlling an etching volume, obtaining an etched surface high in specular properties, and enhancing a selection ratio. SOLUTION: When a prescribed pattern is formed on the surface of a prescribed silicon member 11, the silicon member 11 is arranged in a processing tank 12, which contains an etching solution 13 with its etched surface vertical or nearly vertical to the liquid level of the etching solution 13. While the etching solution 13 is kept in a stationary state, the silicon member 11 is rotated at a low speed around an imaginary center line which extends vertical to its surface passing through its center.
|
