SEMICONDUCTOR DEVICE AND PREPARATION THEREOF

摘要

PROBLEM TO BE SOLVED: To eliminate the problem of internal stresses by forming an insulating film containing an oxynitride silicon layer on a substrate, and setting the ratio of N concentration to Si concentration in the oxynitride silicon layer of the insulating film to a specified range, to thereby block noncombustibles from the substrate. SOLUTION: An insulating layer 101a, made of oxynitride silicon in a base film 101, is formed in contact with the entire surface of a glass substrate 100. At this time, the ratio of N concentration to Si concentration in the oxynitride silicon in the layer 101a is set between 0.3 and 1.6. Then, an insulating layer 101b of an oxide silicon film, a non-crystalline silicon film 102, and a polycrystalline silicon film 103 are sequentially formed on the layer 101a. Furthermore, active layers 104 and 105 are formed on the film 103, after which a gate insulating film 106 is formed. Still further, an aluminum film is formed on the film 106, and the aluminum film is patterned through etching to form gate interconnections 107.